Transistor Type:
PNP
Dimensions:
2.92 x 1.4 x 0.94mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
500 mW
Maximum Collector Emitter Saturation Voltage:
-300 mV
Maximum Collector Base Voltage:
-60 V
Maximum Collector Emitter Voltage:
60 V
Maximum Base Emitter Saturation Voltage:
-1.25 V
Maximum Operating Frequency:
75 MHz
Maximum Emitter Base Voltage:
-5 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum DC Collector Current:
2 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
52 Weeks
Base Part Number:
FSB660
Detailed Description:
Bipolar (BJT) Transistor PNP 60V 2A 75MHz 500mW Surface Mount 3-SSOT
DC Current Gain (hFE) (Min) @ Ic, Vce:
250 @ 500mA, 2V
Transistor Type:
PNP
Frequency - Transition:
75MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
300mV @ 200mA, 2A
Supplier Device Package:
3-SSOT
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
500mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
2A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
