This is manufactured by ON Semiconductor. The manufacturer part number is FPN630A. Base Part Number: fpn6. It features bipolar (bjt) transistor pnp 30v 3a 100mhz 1w through hole to-226. Furthermore, 250 @ 100ma, 2v is the minimum DC current gain at given voltage. The transistor is a pnp type. The transition frequency of the product is 100mhz. The product is available in through hole configuration. The 250mv @ 100ma, 1a is the maximum Vce saturation. to-226 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 30v. In addition, bulk is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 1w. Moreover, the product comes in to-226-3, to-92-3 long body. The maximum collector current includes 3a. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
FPN630(A)(Datasheets)
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This is manufactured by ON Semiconductor. The manufacturer part number is FPN630A. Base Part Number: fpn6. It features bipolar (bjt) transistor pnp 30v 3a 100mhz 1w through hole to-226. Furthermore, 250 @ 100ma, 2v is the minimum DC current gain at given voltage. The transistor is a pnp type. The transition frequency of the product is 100mhz. The product is available in through hole configuration. The 250mv @ 100ma, 1a is the maximum Vce saturation. to-226 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 30v. In addition, bulk is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 1w. Moreover, the product comes in to-226-3, to-92-3 long body. The maximum collector current includes 3a. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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Don’t hesitate to ask questions for better clarification.