Minimum DC Current Gain:
80
Transistor Type:
NPN
Dimensions:
3 x 1.7 x 1mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
630 mW
Maximum Collector Emitter Saturation Voltage:
1 V
Maximum Collector Base Voltage:
160 V
Maximum Collector Emitter Voltage:
160 V
Maximum Operating Frequency:
120 MHz
Height:
1mm
Width:
1.7mm
Length:
3mm
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum DC Collector Current:
800 mA
Maximum Emitter Base Voltage:
5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Single
Base Part Number:
FMBS2
Detailed Description:
Bipolar (BJT) Transistor NPN 160V 800mA 120MHz 630mW Surface Mount SuperSOT™-6
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 100mA, 5V
Transistor Type:
NPN
Frequency - Transition:
120MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
1V @ 50mA, 500mA
Supplier Device Package:
SuperSOT™-6
Voltage - Collector Emitter Breakdown (Max):
160V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
630mW
Customer Reference:
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Current - Collector (Ic) (Max):
800mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
