Category:
Power Transistor
Maximum Base Source Voltage:
±20V
Minimum DC Current Gain:
8
Transistor Type:
NPN
Dimensions:
10.67 x 4.83 x 16.51mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
120 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
16.51mm
Maximum Collector Source Voltage:
0.202V
Width:
4.83mm
Length:
10.67mm
Package Type:
TO-220
Minimum Operating Temperature:
-55 °C
Maximum DC Collector Current:
5 A
Maximum Base Current:
1.5A
Maximum Operating Temperature:
+125 °C
Pin Count:
3
Base Part Number:
FJP214
Detailed Description:
Bipolar (BJT) Transistor NPN 800V 5A 15MHz 120W Through Hole TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 200mA, 5V
Transistor Type:
NPN
Frequency - Transition:
15MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
2V @ 300mA, 1.5A
Series:
ESBC™
Supplier Device Package:
TO-220-3
Voltage - Collector Emitter Breakdown (Max):
800V
Packaging:
Tube
Operating Temperature:
-55°C ~ 125°C (TJ)
Power - Max:
120W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
5A
Current - Collector Cutoff (Max):
10µA (ICBO)
Manufacturer:
ON Semiconductor
