ON Semiconductor FJN3303FBU

FJN3303FBU ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
FJN330
Detailed Description:
Bipolar (BJT) Transistor NPN 400V 1.5A 4MHz 650mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
14 @ 500mA, 2V
Transistor Type:
NPN
Frequency - Transition:
4MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
3V @ 500mA, 1.5A
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
400V
Packaging:
Bulk
Operating Temperature:
150°C (TJ)
Power - Max:
650mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
Current - Collector (Ic) (Max):
1.5A
Current - Collector Cutoff (Max):
10µA (ICBO)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is FJN3303FBU. Base Part Number: fjn330. It features bipolar (bjt) transistor npn 400v 1.5a 4mhz 650mw through hole to-92-3. Furthermore, 14 @ 500ma, 2v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 4mhz. The product is available in through hole configuration. The 3v @ 500ma, 1.5a is the maximum Vce saturation. to-92-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 400v. In addition, bulk is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 650mw. Moreover, the product comes in to-226-3, to-92-3 (to-226aa). The maximum collector current includes 1.5a. In addition, 10µa (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Mult Dev EOL 09/Oct/2020(PCN Obsolescence/ EOL)
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FJN3303F(Datasheets)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Devices 24/Oct/2017(PCN Packaging)

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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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