Minimum DC Current Gain:
6
Transistor Type:
NPN
Dimensions:
10.29 x 4.83 x 9.65mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
100 W
Maximum Continuous Collector Current:
3 A
Maximum Collector Emitter Voltage:
800 V
Maximum Base Emitter Saturation Voltage:
1.2 V
Height:
9.65mm
Width:
4.83mm
Length:
10.29mm
Package Type:
TO-262
Number of Elements per Chip:
1
Maximum Collector Emitter Saturation Voltage:
2.5 V
Maximum Emitter Base Voltage:
12 V
Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3 + Tab
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
8 Weeks
Base Part Number:
FJI560
Detailed Description:
Bipolar (BJT) Transistor NPN 800V 3A 5MHz 100W Through Hole I2PAK (TO-262)
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 400mA, 3V
Transistor Type:
NPN
Frequency - Transition:
5MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
2.5V @ 200mA, 1A
Supplier Device Package:
I2PAK (TO-262)
Voltage - Collector Emitter Breakdown (Max):
800V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
100W
Customer Reference:
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Current - Collector (Ic) (Max):
3A
Current - Collector Cutoff (Max):
100µA
Manufacturer:
ON Semiconductor
