Transistor Type:
PNP
Dimensions:
15.6 x 4.8 x 19.9mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
130 W
Maximum Collector Emitter Saturation Voltage:
-3 V
Maximum Collector Base Voltage:
-250 V
Maximum Collector Emitter Voltage:
250 V
Maximum Operating Frequency:
30 MHz
Maximum Emitter Base Voltage:
-5 V
Package Type:
TO-3P
Number of Elements per Chip:
1
Maximum DC Collector Current:
17 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
FJA4213
Detailed Description:
Bipolar (BJT) Transistor PNP 250V 17A 30MHz 130W Through Hole TO-3P
DC Current Gain (hFE) (Min) @ Ic, Vce:
55 @ 1A, 5V
Transistor Type:
PNP
Frequency - Transition:
30MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
3V @ 800mA, 8A
Supplier Device Package:
TO-3P
Voltage - Collector Emitter Breakdown (Max):
250V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
130W
Customer Reference:
Package / Case:
TO-3P-3, SC-65-3
Current - Collector (Ic) (Max):
17A
Current - Collector Cutoff (Max):
5µA (ICBO)
Manufacturer:
ON Semiconductor
