Transistor Type:
NPN
Dimensions:
9.9 x 4.5 x 15.7mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
100 W
Maximum Collector Emitter Saturation Voltage:
1.5 V
Maximum Collector Base Voltage:
1000 V
Maximum Collector Emitter Voltage:
450 V
Maximum Base Emitter Saturation Voltage:
1.3 V
Height:
15.7mm
Width:
4.5mm
Length:
9.9mm
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum DC Collector Current:
5 A
Maximum Emitter Base Voltage:
9 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
BUT11
Detailed Description:
Bipolar (BJT) Transistor NPN 450V 5A 100W Through Hole TO-220-3
Transistor Type:
NPN
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 500mA, 2.5A
Supplier Device Package:
TO-220-3
Voltage - Collector Emitter Breakdown (Max):
450V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
100W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
5A
Current - Collector Cutoff (Max):
1mA
Manufacturer:
ON Semiconductor
