Transistor Type:
NPN
Dimensions:
10.16 x 4.7 x 15.87mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
40 W
Maximum Collector Emitter Saturation Voltage:
1.5 V
Maximum Collector Base Voltage:
1000 V
Maximum Collector Emitter Voltage:
450 V
Maximum Base Emitter Saturation Voltage:
1.3 V
Maximum Emitter Base Voltage:
9 V
Package Type:
TO-220F
Number of Elements per Chip:
1
Maximum DC Collector Current:
5 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
BUT11
Detailed Description:
Bipolar (BJT) Transistor NPN 450V 5A 40W Through Hole TO-220F
Transistor Type:
NPN
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 500mA, 2.5A
Supplier Device Package:
TO-220F
Voltage - Collector Emitter Breakdown (Max):
450V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
40W
Customer Reference:
Package / Case:
TO-220-3 Full Pack
Current - Collector (Ic) (Max):
5A
Current - Collector Cutoff (Max):
1mA
Manufacturer:
ON Semiconductor
