Minimum DC Current Gain:
100
Transistor Type:
NPN
Dimensions:
9.9 x 4.5 x 15.95mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
80 W
Maximum Continuous Collector Current:
12 A
Maximum Collector Base Voltage:
100 V
Maximum Collector Emitter Voltage:
100 V
Maximum Base Emitter Saturation Voltage:
4 V
Maximum Collector Cut-off Current:
1 mA, 100 μA
Height:
15.95mm
Width:
4.5mm
Length:
9.9mm
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum Collector Emitter Saturation Voltage:
3 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
52 Weeks
Base Part Number:
BDW93
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 100V 12A 80W Through Hole TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
750 @ 5A, 3V
Transistor Type:
NPN - Darlington
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
3V @ 100mA, 10A
Supplier Device Package:
TO-220-3
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
80W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
12A
Current - Collector Cutoff (Max):
1mA
Manufacturer:
ON Semiconductor
