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This is manufactured by ON Semiconductor. The manufacturer part number is BDV65B. Base Part Number: bdv65. It features bipolar (bjt) transistor npn - darlington 100v 10a 125w through hole sot-93. Furthermore, 1000 @ 5a, 4v is the minimum DC current gain at given voltage. The transistor is a npn - darlington type. The product is available in through hole configuration. The 2v @ 20ma, 5a is the maximum Vce saturation. sot-93 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 100v. In addition, tube is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 125w. Moreover, the product comes in to-218-3. The maximum collector current includes 10a. In addition, 1ma is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
For more information please check the datasheets.
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