ON Semiconductor BDC01DRL1G

BDC01DRL1G ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
BDC01D
Detailed Description:
Bipolar (BJT) Transistor NPN 100V 500mA 50MHz 1W Through Hole TO-92 (TO-226)
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 100mA, 1V
Transistor Type:
NPN
Frequency - Transition:
50MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
700mV @ 100mA, 1A
Supplier Device Package:
TO-92 (TO-226)
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Tape & Reel (TR)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
1W
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 Long Body (Formed Leads)
Current - Collector (Ic) (Max):
500mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is BDC01DRL1G. Base Part Number: bdc01d. It features bipolar (bjt) transistor npn 100v 500ma 50mhz 1w through hole to-92 (to-226). Furthermore, 40 @ 100ma, 1v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 50mhz. The product is available in through hole configuration. The 700mv @ 100ma, 1a is the maximum Vce saturation. to-92 (to-226) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 100v. In addition, tape & reel (tr) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 1w. Moreover, the product comes in to-226-3, to-92-3 long body (formed leads). The maximum collector current includes 500ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Multiple Devices 30/Jun/2006(PCN Obsolescence/ EOL)
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BDC01D(Datasheets)

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