Transistor Type:
NPN
Dimensions:
9.9 x 4.5 x 15.7mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
30 W
Maximum Collector Emitter Saturation Voltage:
0.7 V
Maximum Collector Base Voltage:
100 V
Maximum Collector Emitter Voltage:
115 V
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum DC Collector Current:
2 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
BD239
Detailed Description:
Bipolar (BJT) Transistor NPN 100V 2A 30W Through Hole TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
15 @ 1A, 4V
Transistor Type:
NPN
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
700mV @ 200mA, 1A
Supplier Device Package:
TO-220-3
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
30W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
2A
Current - Collector Cutoff (Max):
300µA
Manufacturer:
ON Semiconductor
