Transistor Type:
NPN
Dimensions:
8.3 x 3.45 x 11.2mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
12.5 W
Maximum Collector Emitter Saturation Voltage:
0.5 V
Maximum Collector Base Voltage:
80 V
Maximum Collector Emitter Voltage:
80 V
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-126
Number of Elements per Chip:
1
Maximum DC Collector Current:
1.5 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
10 Weeks
Base Part Number:
BD13910
Detailed Description:
Bipolar (BJT) Transistor NPN 80V 1.5A 1.25W Through Hole TO-126-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
63 @ 150mA, 2V
Transistor Type:
NPN
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
500mV @ 50mA, 500mA
Supplier Device Package:
TO-126-3
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
1.25W
Customer Reference:
Package / Case:
TO-225AA, TO-126-3
Current - Collector (Ic) (Max):
1.5A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
