Minimum DC Current Gain:
110
Transistor Type:
PNP
Dimensions:
2.9 x 1.3 x 0.93mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
310 mW
Maximum Collector Emitter Saturation Voltage:
-300 mV
Maximum Collector Base Voltage:
-30 V
Maximum Collector Emitter Voltage:
30 V
Maximum Base Emitter Saturation Voltage:
-700 mV
Maximum Operating Frequency:
150 MHz
Height:
0.93mm
Width:
1.3mm
Length:
2.9mm
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum DC Collector Current:
100 mA
Maximum Emitter Base Voltage:
-5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
BC858
Detailed Description:
Bipolar (BJT) Transistor PNP 30V 100mA 150MHz 310mW Surface Mount SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 2mA, 5V
Transistor Type:
PNP
Frequency - Transition:
150MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
650mV @ 5mA, 100mA
Supplier Device Package:
SOT-23-3
Voltage - Collector Emitter Breakdown (Max):
30V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
310mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
15nA (ICBO)
Manufacturer:
ON Semiconductor
