ON Semiconductor BC373G

BC373G ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
BC373
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 80V 1A 200MHz 625mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
10000 @ 100mA, 5V
Transistor Type:
NPN - Darlington
Frequency - Transition:
200MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1.1V @ 250µA, 250mA
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Bulk
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
625mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
Current - Collector (Ic) (Max):
1A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is BC373G. Base Part Number: bc373. It features bipolar (bjt) transistor npn - darlington 80v 1a 200mhz 625mw through hole to-92-3. Furthermore, 10000 @ 100ma, 5v is the minimum DC current gain at given voltage. The transistor is a npn - darlington type. The transition frequency of the product is 200mhz. The product is available in through hole configuration. The 1.1v @ 250µa, 250ma is the maximum Vce saturation. to-92-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 80v. In addition, bulk is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 625mw. Moreover, the product comes in to-226-3, to-92-3 (to-226aa). The maximum collector current includes 1a. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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BC372, 373(Datasheets)

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