Dimensions:
5.2 x 4.19 x 5.33mm
Maximum Collector Emitter Saturation Voltage:
1 V dc
Width:
4.19mm
Transistor Configuration:
Single
Maximum Operating Frequency:
200 MHz
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
PNP
Maximum Collector Base Voltage:
350 V dc
Maximum Base Emitter Saturation Voltage:
0.90 V dc
Maximum Emitter Base Voltage:
5 V
Length:
5.2mm
Maximum DC Collector Current:
500 mA
Pin Count:
3
Minimum DC Current Gain:
50
Mounting Type:
Through Hole
Maximum Power Dissipation:
625 mW
Maximum Collector Emitter Voltage:
350 V
Height:
5.33mm
Minimum Operating Temperature:
-55 °C
Base Part Number:
2N6520
Detailed Description:
Bipolar (BJT) Transistor PNP 350V 500mA 200MHz 625mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 50mA, 10V
Transistor Type:
PNP
Frequency - Transition:
200MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1V @ 5mA, 50mA
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
350V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
625mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Current - Collector (Ic) (Max):
500mA
Current - Collector Cutoff (Max):
50nA (ICBO)
Manufacturer:
ON Semiconductor
