ON Semiconductor 2N6428ATA

2N6428ATA ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
2N6428
Detailed Description:
Bipolar (BJT) Transistor NPN 50V 200mA 700MHz 625mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
250 @ 100µA, 5V
Transistor Type:
NPN
Frequency - Transition:
700MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
600mV @ 5mA, 100mA
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Tape & Box (TB)
Operating Temperature:
150°C (TJ)
Power - Max:
625mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Current - Collector (Ic) (Max):
200mA
Current - Collector Cutoff (Max):
25nA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is 2N6428ATA. Base Part Number: 2n6428. It features bipolar (bjt) transistor npn 50v 200ma 700mhz 625mw through hole to-92-3. Furthermore, 250 @ 100µa, 5v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 700mhz. The product is available in through hole configuration. The 600mv @ 5ma, 100ma is the maximum Vce saturation. to-92-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, tape & box (tb) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 625mw. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) (formed leads). The maximum collector current includes 200ma. In addition, 25na is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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2N6428/A(Datasheets)

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