ON Semiconductor 2N6338

2N6338 ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
2N6338
Detailed Description:
Bipolar (BJT) Transistor NPN 100V 25A 40MHz 200W Through Hole TO-204 (TO-3)
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 10A, 2V
Transistor Type:
NPN
Frequency - Transition:
40MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1.8V @ 2.5A, 25A
Supplier Device Package:
TO-204 (TO-3)
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Tray
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
200W
Customer Reference:
Package / Case:
TO-204AA, TO-3
Current - Collector (Ic) (Max):
25A
Current - Collector Cutoff (Max):
50µA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is 2N6338. Base Part Number: 2n6338. It features bipolar (bjt) transistor npn 100v 25a 40mhz 200w through hole to-204 (to-3). Furthermore, 30 @ 10a, 2v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 40mhz. The product is available in through hole configuration. The 1.8v @ 2.5a, 25a is the maximum Vce saturation. to-204 (to-3) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 100v. In addition, tray is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 200w. Moreover, the product comes in to-204aa, to-3. The maximum collector current includes 25a. In addition, 50µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Multiple Devices 06/Oct/2006(PCN Obsolescence/ EOL)
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2N6338,41(Datasheets)

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