ON Semiconductor 2N6111

Enrgtech Part No: ET14508573
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Manufacturer Part No:
2N6111
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Manufacturer: ON Semiconductor

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Product Information

Base Part Number:

2N6111

Detailed Description:

Bipolar (BJT) Transistor PNP 30V 7A 10MHz 40W Through Hole TO-220

DC Current Gain (hFE) (Min) @ Ic, Vce:

30 @ 3A, 4V

Transistor Type:

PNP

Frequency - Transition:

10MHz

Mounting Type:

Through Hole

Vce Saturation (Max) @ Ib, Ic:

3.5V @ 3A, 7A

Supplier Device Package:

TO-220

Voltage - Collector Emitter Breakdown (Max):

30V

Packaging:

Tube

Operating Temperature:

-65°C ~ 150°C (TJ)

Power - Max:

40W

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This is manufactured by ON Semiconductor. The manufacturer part number is 2N6111. Base Part Number: 2n6111. It features bipolar (bjt) transistor pnp 30v 7a 10mhz 40w through hole to-220. Furthermore, 30 @ 3a, 4v is the minimum DC current gain at given voltage. The transistor is a pnp type. The transition frequency of the product is 10mhz. The product is available in through hole configuration. The 3.5v @ 3a, 7a is the maximum Vce saturation. to-220 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 30v. In addition, tube is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 40w. Moreover, the product comes in to-220-3. The maximum collector current includes 7a. In addition, 1ma is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

Multiple Devices 19/Jun/2009(PCN Obsolescence/ EOL)

2N61xx, 2N62xx(Datasheets)

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