ON Semiconductor 2N5769

2N5769 ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
2N576
Detailed Description:
Bipolar (BJT) Transistor NPN 15V 200mA 350mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 10mA, 350mV
Transistor Type:
NPN
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
500mV @ 10mA, 100mA
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
15V
Packaging:
Bulk
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
350mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
Current - Collector (Ic) (Max):
200mA
Current - Collector Cutoff (Max):
400µA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is 2N5769. Base Part Number: 2n576. It features bipolar (bjt) transistor npn 15v 200ma 350mw through hole to-92-3. Furthermore, 40 @ 10ma, 350mv is the minimum DC current gain at given voltage. The transistor is a npn type. The product is available in through hole configuration. The 500mv @ 10ma, 100ma is the maximum Vce saturation. to-92-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 15v. In addition, bulk is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 350mw. Moreover, the product comes in to-226-3, to-92-3 (to-226aa). The maximum collector current includes 200ma. In addition, 400µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Multiple Devices 14/Mar/2011(PCN Obsolescence/ EOL)
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2N5769(Datasheets)

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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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