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This is manufactured by ON Semiconductor. The manufacturer part number is 2N5550G. Base Part Number: 2n5550. It features bipolar (bjt) transistor npn 140v 600ma 300mhz 625mw through hole to-92-3. Furthermore, 60 @ 10ma, 5v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 300mhz. The product is available in through hole configuration. The 250mv @ 5ma, 50ma is the maximum Vce saturation. to-92-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 140v. In addition, bulk is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 625mw. Moreover, the product comes in to-226-3, to-92-3 (to-226aa). The maximum collector current includes 600ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
For more information please check the datasheets.
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