ON Semiconductor 2N4124

2N4124 ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
2N4124
Detailed Description:
Bipolar (BJT) Transistor NPN 25V 200mA 300MHz 625mW Through Hole TO-92 (TO-226)
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 2mA, 1V
Transistor Type:
NPN
Frequency - Transition:
300MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
300mV @ 5mA, 50mA
Supplier Device Package:
TO-92 (TO-226)
Voltage - Collector Emitter Breakdown (Max):
25V
Packaging:
Bulk
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
625mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 Long Body
Current - Collector (Ic) (Max):
200mA
Current - Collector Cutoff (Max):
50nA (ICBO)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is 2N4124. Base Part Number: 2n4124. It features bipolar (bjt) transistor npn 25v 200ma 300mhz 625mw through hole to-92 (to-226). Furthermore, 120 @ 2ma, 1v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 300mhz. The product is available in through hole configuration. The 300mv @ 5ma, 50ma is the maximum Vce saturation. to-92 (to-226) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 25v. In addition, bulk is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 625mw. Moreover, the product comes in to-226-3, to-92-3 long body. The maximum collector current includes 200ma. In addition, 50na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Multiple Devices 30/Jun/2006(PCN Obsolescence/ EOL)
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2N4123, 2N4124(Datasheets)

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