ON Semiconductor 2N3416_D26Z

2N3416_D26Z ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
2N341
Detailed Description:
Bipolar (BJT) Transistor NPN 50V 500mA 625mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
75 @ 2mA, 4.5V
Transistor Type:
NPN
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
300mV @ 3mA, 50mA
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Tape & Reel (TR)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
625mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Current - Collector (Ic) (Max):
500mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is 2N3416_D26Z. Base Part Number: 2n341. It features bipolar (bjt) transistor npn 50v 500ma 625mw through hole to-92-3. Furthermore, 75 @ 2ma, 4.5v is the minimum DC current gain at given voltage. The transistor is a npn type. The product is available in through hole configuration. The 300mv @ 3ma, 50ma is the maximum Vce saturation. to-92-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, tape & reel (tr) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 625mw. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) (formed leads). The maximum collector current includes 500ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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2N3416, 2N3417(Datasheets)

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