Minimum DC Current Gain:
5
Transistor Type:
NPN
Dimensions:
9.9 x 4.5 x 14.2mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
30 W
Maximum Collector Emitter Saturation Voltage:
3 V
Maximum Collector Base Voltage:
700 V
Maximum Collector Emitter Voltage:
400 V
Maximum Base Emitter Saturation Voltage:
1.2 V
Maximum Operating Frequency:
0.1 MHz
Height:
14.2mm
Width:
4.5mm
Length:
9.9mm
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum DC Collector Current:
1.5 A
Maximum Emitter Base Voltage:
9 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
1.5 A
HTSUS:
8542.39.0001
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
9 @ 500mA, 2V
edacadModel:
KSE13003TH1ATU Models
Frequency - Transition:
4MHz
Vce Saturation (Max) @ Ib, Ic:
3V @ 500mA, 1.5A
Voltage - Collector Emitter Breakdown (Max):
400 V
edacadModelUrl:
/en/models/13451294
Transistor Type:
NPN
Package:
Bulk
Current - Collector Cutoff (Max):
-
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220-3
Power - Max:
20 W
ECCN:
EAR99
