Fairchild Semiconductor 2N5551TF

2N5551TF Fairchild Semiconductor
Fairchild Semiconductor

Product Information

Current - Collector (Ic) (Max):
600 mA
HTSUS:
8541.21.0075
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
Frequency - Transition:
100MHz
Vce Saturation (Max) @ Ib, Ic:
200mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max):
160 V
Transistor Type:
NPN
Package:
Bulk
Current - Collector Cutoff (Max):
50nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Power - Max:
625 mW
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is 2N5551TF. The maximum collector current includes 600 ma. It is assigned with possible HTSUS value of 8541.21.0075. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) formed leads. Furthermore, 80 @ 10ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 100mhz. The 200mv @ 5ma, 50ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 160 v. The transistor is a npn type. It is shipped in bulk package . In addition, 50na (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-92-3 is the supplier device package value. The maximum power of the product is 625 mw. The product is designated with the ear99 code number.

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