Minimum DC Current Gain:
40
Transistor Type:
NPN
Dimensions:
4.58 x 3.86 x 4.58mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
800 mW
Maximum Collector Emitter Saturation Voltage:
0.4 V
Maximum Collector Base Voltage:
80 V
Maximum Collector Emitter Voltage:
60 V
Maximum Base Emitter Saturation Voltage:
1.1 V
Maximum Operating Frequency:
1 MHz
Height:
4.58mm
Width:
3.86mm
Length:
4.58mm
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
0.7 A
Maximum Emitter Base Voltage:
8 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
700 mA
HTSUS:
8541.29.0095
RoHS Status:
Not applicable
Operating Temperature:
150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
DC Current Gain (hFE) (Min) @ Ic, Vce:
70 @ 50mA, 2V
Frequency - Transition:
50MHz
Vce Saturation (Max) @ Ib, Ic:
400mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max):
60 V
Transistor Type:
NPN
Package:
Bulk
Moisture Sensitivity Level (MSL):
3 (168 Hours)
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Power - Max:
800 mW
Base Product Number:
KSC1008
ECCN:
EAR99
