Minimum DC Current Gain:
110
Transistor Type:
NPN
Dimensions:
4.58 x 3.86 x 4.58mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
500 mW
Maximum Collector Emitter Saturation Voltage:
600 mV
Maximum Collector Base Voltage:
80 V
Maximum Collector Emitter Voltage:
65 V
Maximum Base Emitter Saturation Voltage:
900 mV
Maximum Operating Frequency:
1 MHz
Height:
4.58mm
Width:
3.86mm
Length:
4.58mm
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
100 mA
Maximum Emitter Base Voltage:
6 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
65 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
DC Current Gain (hFE) (Min) @ Ic, Vce:
420 @ 2mA, 5V
Frequency - Transition:
300MHz
Vce Saturation (Max) @ Ib, Ic:
600mV @ 5mA, 100mA
REACH Status:
REACH Unaffected
Transistor Type:
NPN
Package:
Bulk
Moisture Sensitivity Level (MSL):
Not Applicable
Current - Collector Cutoff (Max):
15nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Power - Max:
500 mW
