Fairchild KSD526YTU NPN Transistor, 4 A, 80 V, 3-Pin TO-220

KSD526YTU Fairchild  NPN Transistor, 4 A, 80 V, 3-Pin TO-220
KSD526YTU
KSD526YTU
Fairchild Semiconductor

Product Information

Minimum DC Current Gain:
15
Transistor Type:
NPN
Dimensions:
9.9 x 4.5 x 18.95mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
30 W
Maximum Collector Emitter Saturation Voltage:
1.5 V
Maximum Collector Base Voltage:
80 V
Maximum Collector Emitter Voltage:
80 V
Maximum Operating Frequency:
1 MHz
Height:
18.95mm
Width:
4.5mm
Length:
9.9mm
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum DC Collector Current:
4 A
Maximum Emitter Base Voltage:
5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
4 A
Transistor Type:
NPN
Mounting Type:
Through Hole
HTSUS:
0000.00.0000
Package:
Bulk
Current - Collector Cutoff (Max):
30µA (ICBO)
Series:
-
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 300mA, 3A
Operating Temperature:
150°C (TJ)
Supplier Device Package:
TO-220-3
Power - Max:
30 W
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 500mA, 5V
Package / Case:
TO-220-3
Frequency - Transition:
8MHz
Voltage - Collector Emitter Breakdown (Max):
80 V
RoHs Compliant
Checking for live stock

This is Fairchild NPN Transistor 4 A 80 V 3-Pin TO-220 manufactured by Fairchild Semiconductor. The manufacturer part number is KSD526YTU. It features up to 15 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 9.9 x 4.5 x 18.95mm. The product is available in through hole configuration. Provides up to 30 w maximum power dissipation. The product has a maximum 1.5 v collector emitter saturation voltage . Additionally, it has 80 v maximum collector base voltage. Whereas features a 80 v of collector emitter voltage (max). It carries 1 mhz of maximum operating frequency. In addition, the height is 18.95mm. Furthermore, the product is 4.5mm wide. Its accurate length is 9.9mm. The package is a sort of to-220. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 4 a. It features a 5 v of maximum emitter base voltage. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 4 a. It is assigned with possible HTSUS value of 0000.00.0000. It is shipped in bulk package . In addition, 30µa (icbo) is the maximum current at collector cutoff. The 1.5v @ 300ma, 3a is the maximum Vce saturation. The product has 150°c (tj) operating temperature range. to-220-3 is the supplier device package value. The maximum power of the product is 30 w. Furthermore, 120 @ 500ma, 5v is the minimum DC current gain at given voltage. Moreover, the product comes in to-220-3. The transition frequency of the product is 8mhz. The maximum collector emitter breakdown voltage of the product is 80 v.

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KSD526, NPN Epitaxial Silicon Transistor, Power Amplifier Applications Data Sheet(Technical Reference)

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