Minimum DC Current Gain:
100
Transistor Type:
NPN
Dimensions:
4.9 x 3.9 x 8mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
1 W
Maximum Collector Emitter Saturation Voltage:
2 V
Maximum Collector Base Voltage:
30 V
Maximum Collector Emitter Voltage:
30 V
Maximum Operating Frequency:
1 MHz
Height:
8mm
Width:
3.9mm
Length:
4.9mm
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
2 A
Maximum Emitter Base Voltage:
5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
2 A
HTSUS:
8542.39.0001
Operating Temperature:
150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 Long Body (Formed Leads)
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 500mA, 2V
Frequency - Transition:
120MHz
Vce Saturation (Max) @ Ib, Ic:
2V @ 30mA, 1.5A
Voltage - Collector Emitter Breakdown (Max):
30 V
Transistor Type:
NPN
Package:
Bulk
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Power - Max:
1 W
ECCN:
EAR99
