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This is manufactured by Microsemi Corporation. The manufacturer part number is 2N5582. It has typical 16 weeks of manufacturer standard lead time. The maximum collector current includes 800ma. It features bipolar (bjt) transistor npn 50v 800ma 500mw through hole to-46-3. Furthermore, 100 @ 150ma, 10v is the minimum DC current gain at given voltage. The transistor is a npn type. The product is available in through hole configuration. The 1v @ 50ma, 500ma is the maximum Vce saturation. to-46-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, bulk is the available packaging type of the product. The product has -55°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 500mw. Moreover, the product comes in to-206ab, to-46-3 metal can. In addition, 10µa (icbo) is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.
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