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This is manufactured by Microsemi Corporation. The manufacturer part number is 2N3485A. The maximum collector current includes 600ma. It features bipolar (bjt) transistor pnp 60v 600ma 400mw through hole to-46 (to-206ab). Furthermore, 40 @ 150ma, 10v is the minimum DC current gain at given voltage. The transistor is a pnp type. The product is available in through hole configuration. The 1.6v @ 50ma, 500ma is the maximum Vce saturation. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. to-46 (to-206ab) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 400mw. Moreover, the product comes in to-206ab, to-46-3 metal can. In addition, 10µa (icbo) is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.
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