Microsemi Corporation JAN2N3700UB

Microsemi Corporation

Product Information

Current - Collector (Ic) (Max):
1A
Detailed Description:
Bipolar (BJT) Transistor NPN 80V 1A 500mW Surface Mount 3-UB (2.9x2.2)
DC Current Gain (hFE) (Min) @ Ic, Vce:
50 @ 500mA, 10V
Transistor Type:
NPN
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
500mV @ 50mA, 500mA
Series:
Military, MIL-PRF-19500/391
Package / Case:
3-SMD, No Lead
Supplier Device Package:
3-UB (2.9x2.2)
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
500mW
Customer Reference:
Notification:
QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Current - Collector Cutoff (Max):
10µA (ICBO)
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is JAN2N3700UB. The maximum collector current includes 1a. It features bipolar (bjt) transistor npn 80v 1a 500mw surface mount 3-ub (2.9x2.2). Furthermore, 50 @ 500ma, 10v is the minimum DC current gain at given voltage. The transistor is a npn type. The product is available in surface mount configuration. The 500mv @ 50ma, 500ma is the maximum Vce saturation. The product military, mil-prf-19500/391, is a highly preferred choice for users. Moreover, the product comes in 3-smd, no lead. 3-ub (2.9x2.2) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 80v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 500mw. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. In addition, 10µa (icbo) is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.

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