Microsemi Corporation JANTX2N6251

JANTX2N6251 Microsemi Corporation
Microsemi Corporation

Product Information

Current - Collector (Ic) (Max):
10A
Detailed Description:
Bipolar (BJT) Transistor NPN 350V 10A 5.5W Through Hole TO-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
6 @ 10A, 3V
Transistor Type:
NPN
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 1.67A, 10A
Series:
Military, MIL-PRF-19500/510
Package / Case:
TO-204AA, TO-3
Supplier Device Package:
TO-3
Voltage - Collector Emitter Breakdown (Max):
350V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
5.5W
Customer Reference:
Notification:
QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Current - Collector Cutoff (Max):
1mA
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is JANTX2N6251. The maximum collector current includes 10a. It features bipolar (bjt) transistor npn 350v 10a 5.5w through hole to-3. Furthermore, 6 @ 10a, 3v is the minimum DC current gain at given voltage. The transistor is a npn type. The product is available in through hole configuration. The 1.5v @ 1.67a, 10a is the maximum Vce saturation. The product military, mil-prf-19500/510, is a highly preferred choice for users. Moreover, the product comes in to-204aa, to-3. to-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 350v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 5.5w. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. In addition, 1ma is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.

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