Microsemi Corporation JANTX2N3739

JANTX2N3739 Microsemi Corporation
Microsemi Corporation

Product Information

Current - Collector (Ic) (Max):
1A
Detailed Description:
Bipolar (BJT) Transistor NPN 300V 1A 20W
DC Current Gain (hFE) (Min) @ Ic, Vce:
25 @ 250mA, 10V
Transistor Type:
NPN
Vce Saturation (Max) @ Ib, Ic:
2.5V @ 25mA, 250mA
Series:
Military, MIL-PRF-19500/402
Voltage - Collector Emitter Breakdown (Max):
300V
Packaging:
Bulk
Operating Temperature:
-55°C ~ 200°C (TJ)
Power - Max:
20W
Customer Reference:
Notification:
QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Current - Collector Cutoff (Max):
100µA (ICBO)
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is JANTX2N3739. The maximum collector current includes 1a. It features bipolar (bjt) transistor npn 300v 1a 20w. Furthermore, 25 @ 250ma, 10v is the minimum DC current gain at given voltage. The transistor is a npn type. The 2.5v @ 25ma, 250ma is the maximum Vce saturation. The product military, mil-prf-19500/402, is a highly preferred choice for users. The maximum collector emitter breakdown voltage of the product is 300v. In addition, bulk is the available packaging type of the product. The product has -55°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 20w. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. In addition, 100µa (icbo) is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.

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FAQs

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