Toshiba Semiconductor and Storage 2SA1955FVBTPL3Z

Enrgtech Part No: ET12237516
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Manufacturer Part No:
2SA1955FVBTPL3Z
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Manufacturer: Toshiba Semiconductor and Storage

Product Information

Current - Collector (Ic) (Max):

400 mA

HTSUS:

8541.21.0075

Operating Temperature:

150°C (TJ)

Package / Case:

SOT-723

DC Current Gain (hFE) (Min) @ Ic, Vce:

300 @ 10mA, 2V

Frequency - Transition:

130MHz

title:

2SA1955FVBTPL3Z

Voltage - Collector Emitter Breakdown (Max):

12 V

Transistor Type:

PNP

Vce Saturation (Max) @ Ib, Ic:

250mV @ 10mA, 200mA

Moisture Sensitivity Level (MSL):

1 (Unlimited)

Current - Collector Cutoff (Max):

100nA (ICBO)

Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SA1955FVBTPL3Z. The maximum collector current includes 400 ma. It is assigned with possible HTSUS value of 8541.21.0075. The product has 150°c (tj) operating temperature range. Moreover, the product comes in sot-723. Furthermore, 300 @ 10ma, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 130mhz. The maximum collector emitter breakdown voltage of the product is 12 v. The transistor is a pnp type. The 250mv @ 10ma, 200ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. vesm is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 100 mw. Moreover, it corresponds to 2sa1955, a base product number of the product. The product is designated with the ear99 code number.

2SA1955F(Datasheets)

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