ON Semiconductor NSV1C201LT1G

NSV1C201LT1G ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
24 Weeks
Base Part Number:
NSV1C2
Detailed Description:
Bipolar (BJT) Transistor NPN 100V 2A 110MHz 490mW Surface Mount SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 500mA, 2V
Transistor Type:
NPN
Frequency - Transition:
110MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
150mV @ 200mA, 2A
Supplier Device Package:
SOT-23-3 (TO-236)
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
490mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
2A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NSV1C201LT1G. It has typical 24 weeks of manufacturer standard lead time. Base Part Number: nsv1c2. It features bipolar (bjt) transistor npn 100v 2a 110mhz 490mw surface mount sot-23-3 (to-236). Furthermore, 120 @ 500ma, 2v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 110mhz. The product is available in surface mount configuration. The 150mv @ 200ma, 2a is the maximum Vce saturation. sot-23-3 (to-236) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 100v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 490mw. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The maximum collector current includes 2a. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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NSS,NSV1C201L(Datasheets)
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SOT23 27/Sep/2016(PCN Design/Specification)

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