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This is manufactured by Central Semiconductor Corp. The manufacturer part number is 2N5306. The maximum collector current includes 300ma. It features bipolar (bjt) transistor npn - darlington 25v 300ma 60mhz 625mw through hole to-92. Furthermore, 7000 @ 2ma, 5v is the minimum DC current gain at given voltage. The transistor is a npn - darlington type. The transition frequency of the product is 60mhz. The product is available in through hole configuration. The 1.4v @ 200µa, 200ma is the maximum Vce saturation. to-92 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 25v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 625mw. Moreover, the product comes in to-226-3, to-92-3 (to-226aa). In addition, 100na (icbo) is the maximum current at collector cutoff. The central semiconductor corp's product offers user-desired applications.
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