Rohm Semiconductor 2SD2662T100

2SD2662T100 Rohm Semiconductor
2SD2662T100
Rohm Semiconductor

Product Information

Base Part Number:
2SD2662
Detailed Description:
Bipolar (BJT) Transistor NPN 30V 1.5A 330MHz 2W Surface Mount MPT3
DC Current Gain (hFE) (Min) @ Ic, Vce:
270 @ 100mA, 2V
Transistor Type:
NPN
Frequency - Transition:
330MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
350mV @ 50mA, 1A
Supplier Device Package:
MPT3
Voltage - Collector Emitter Breakdown (Max):
30V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
2W
Customer Reference:
Package / Case:
TO-243AA
Current - Collector (Ic) (Max):
1.5A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is 2SD2662T100. Base Part Number: 2sd2662. It features bipolar (bjt) transistor npn 30v 1.5a 330mhz 2w surface mount mpt3. Furthermore, 270 @ 100ma, 2v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 330mhz. The product is available in surface mount configuration. The 350mv @ 50ma, 1a is the maximum Vce saturation. mpt3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 30v. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 2w. Moreover, the product comes in to-243aa. The maximum collector current includes 1.5a. In addition, 100na (icbo) is the maximum current at collector cutoff. The rohm semiconductor's product offers user-desired applications.

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Mult Devices Marking 16/Apr/2018(PCN Design/Specification)

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