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United Kingdom
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SA1312GRTE85LF. The maximum collector current includes 100 ma. It is assigned with possible HTSUS value of 8541.21.0075. The product is rohs compliant. The product has 125°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 200 @ 2ma, 6v is the minimum DC current gain at given voltage. The transition frequency of the product is 100mhz. The maximum collector emitter breakdown voltage of the product is 120 v. The transistor is a pnp type. The 300mv @ 1ma, 10ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. s-mini is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 150 mw. Moreover, it corresponds to 2sa1312, a base product number of the product. The product is designated with the ear99 code number.
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