ON Semiconductor NSV60201LT1G

NSV60201LT1G ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
NSV60201
Detailed Description:
Bipolar (BJT) Transistor NPN 60V 2A 100MHz 460mW Surface Mount SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce:
150 @ 1A, 2V
Transistor Type:
NPN
Frequency - Transition:
100MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
140mV @ 200mA, 2A
Supplier Device Package:
SOT-23-3 (TO-236)
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
460mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
2A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NSV60201LT1G. Base Part Number: nsv60201. It features bipolar (bjt) transistor npn 60v 2a 100mhz 460mw surface mount sot-23-3 (to-236). Furthermore, 150 @ 1a, 2v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 100mhz. The product is available in surface mount configuration. The 140mv @ 200ma, 2a is the maximum Vce saturation. sot-23-3 (to-236) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 460mw. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The maximum collector current includes 2a. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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NSS60201LT1G(Datasheets)
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SOT23 27/Sep/2016(PCN Design/Specification)

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