Transistor Type:
PNP
Dimensions:
10.63 x 4.9 x 16.12mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
36 W
Maximum Collector Emitter Saturation Voltage:
1 V dc
Maximum Collector Emitter Voltage:
80 V
Maximum Base Emitter Saturation Voltage:
1.5 V dc
Maximum Operating Frequency:
20 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum DC Collector Current:
10 (Continuous) A, 20 (Peak) A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Isolated
Manufacturer Standard Lead Time:
27 Weeks
Base Part Number:
MJF45
Detailed Description:
Bipolar (BJT) Transistor PNP 80V 10A 40MHz 2W Through Hole TO-220FP
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 4A, 1V
Transistor Type:
PNP
Frequency - Transition:
40MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1V @ 400mA, 8A
Supplier Device Package:
TO-220FP
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
2W
Customer Reference:
Package / Case:
TO-220-3 Full Pack
Current - Collector (Ic) (Max):
10A
Current - Collector Cutoff (Max):
1µA
Manufacturer:
ON Semiconductor
