Minimum DC Current Gain:
750
Transistor Type:
PNP
Dimensions:
10.28 x 4.82 x 9.28mm
Mounting Type:
Through Hole
Maximum Emitter Base Voltage:
5 V
Maximum Continuous Collector Current:
8 A
Maximum Collector Base Voltage:
100 V
Maximum Collector Emitter Voltage:
100 V
Maximum Base Emitter Saturation Voltage:
2.5 V
Maximum Collector Cut-off Current:
0.2mA
Height:
9.28mm
Width:
4.82mm
Length:
10.28mm
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Collector Emitter Saturation Voltage:
2 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
8 Weeks
Base Part Number:
BDX54
Detailed Description:
Bipolar (BJT) Transistor PNP - Darlington 100V 8A 65W Through Hole TO-220AB
DC Current Gain (hFE) (Min) @ Ic, Vce:
750 @ 3A, 3V
Transistor Type:
PNP - Darlington
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
2V @ 12mA, 3A
Supplier Device Package:
TO-220AB
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
65W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
8A
Current - Collector Cutoff (Max):
500µA
Manufacturer:
ON Semiconductor
