ON Semiconductor NSV40501UW3T2G

ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
4 Weeks
Base Part Number:
NSV405
Detailed Description:
Bipolar (BJT) Transistor NPN 40V 5A 150MHz 875mW Surface Mount 3-WDFN (2x2)
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 2A, 2V
Transistor Type:
NPN
Frequency - Transition:
150MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
150mV @ 400mA, 4A
Supplier Device Package:
3-WDFN (2x2)
Voltage - Collector Emitter Breakdown (Max):
40V
Packaging:
Tape & Reel (TR)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
875mW
Customer Reference:
Package / Case:
3-WDFN Exposed Pad
Current - Collector (Ic) (Max):
5A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NSV40501UW3T2G. It has typical 4 weeks of manufacturer standard lead time. Base Part Number: nsv405. It features bipolar (bjt) transistor npn 40v 5a 150mhz 875mw surface mount 3-wdfn (2x2). Furthermore, 200 @ 2a, 2v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 150mhz. The product is available in surface mount configuration. The 150mv @ 400ma, 4a is the maximum Vce saturation. 3-wdfn (2x2) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 40v. In addition, tape & reel (tr) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 875mw. Moreover, the product comes in 3-wdfn exposed pad. The maximum collector current includes 5a. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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NSS40501UW3T2G(Datasheets)

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