Transistor Type:
NPN
Dimensions:
6.5 x 5.5 x 2.3mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
15 W
Maximum Collector Emitter Saturation Voltage:
240 mV
Maximum Collector Base Voltage:
100 V
Maximum Collector Emitter Voltage:
50 V
Maximum Base Emitter Saturation Voltage:
1.2 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
6 V
Package Type:
TP-FA
Number of Elements per Chip:
1
Maximum DC Collector Current:
8 A
Maximum Operating Temperature:
+150 °C
Pin Count:
4
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
16 Weeks
Base Part Number:
2SC5707
Detailed Description:
Bipolar (BJT) Transistor NPN 50V 8A 330MHz 1W Surface Mount 2-TP-FA
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 500mA, 2V
Transistor Type:
NPN
Frequency - Transition:
330MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
240mV @ 175mA, 3.5A
Supplier Device Package:
2-TP-FA
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
1W
Customer Reference:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Collector (Ic) (Max):
8A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor