ON Semiconductor BCW32LT1G

BCW32LT1G ON Semiconductor
BCW32LT1G
BCW32LT1G
ET12085709
ET12085709
Transistors - Bipolar (BJT) - Single
Transistors - Bipolar (BJT) - Single
BCW32LT1G ON SemiconductorON Semiconductor
ON Semiconductor

Product Information

Dimensions:
3.04 x 1.4 x 1.11mm
Maximum Collector Emitter Saturation Voltage:
0.25 V dc
Width:
1.4mm
Transistor Configuration:
Single
Maximum Operating Frequency:
1 MHz
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
NPN
Maximum Collector Base Voltage:
32 V dc
Maximum Emitter Base Voltage:
5 V
Length:
3.04mm
Maximum DC Collector Current:
100 mA
Pin Count:
3
Minimum DC Current Gain:
200
Mounting Type:
Surface Mount
Maximum Power Dissipation:
225 mW
Maximum Collector Emitter Voltage:
32 V
Height:
1.11mm
Minimum Operating Temperature:
-50 °C
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
BCW32
Detailed Description:
Bipolar (BJT) Transistor NPN 32V 100mA 225mW Surface Mount SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 2mA, 5V
Transistor Type:
NPN
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
250mV @ 500µA, 10mA
Supplier Device Package:
SOT-23-3 (TO-236)
Voltage - Collector Emitter Breakdown (Max):
32V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
225mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
RoHs Compliant
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is BCW32LT1G. The given dimensions of the product include 3.04 x 1.4 x 1.11mm. The product has a maximum 0.25 v dc collector emitter saturation voltage . Furthermore, the product is 1.4mm wide. The product offers single transistor configuration. It carries 1 mhz of maximum operating frequency. The package is a sort of sot-23. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. The transistor is a npn type. Additionally, it has 32 v dc maximum collector base voltage. It features a 5 v of maximum emitter base voltage. Its accurate length is 3.04mm. Moreover, it has a maximum DC collector current of 100 ma. It contains 3 pins. It features up to 200 of minimum DC current gain. The product is available in surface mount configuration. Provides up to 225 mw maximum power dissipation. Whereas features a 32 v of collector emitter voltage (max). In addition, the height is 1.11mm. Whereas, the minimum operating temperature of the product is -50 °c. It has typical 2 weeks of manufacturer standard lead time. Base Part Number: bcw32. It features bipolar (bjt) transistor npn 32v 100ma 225mw surface mount sot-23-3 (to-236). Furthermore, 200 @ 2ma, 5v is the minimum DC current gain at given voltage. The 250mv @ 500µa, 10ma is the maximum Vce saturation. sot-23-3 (to-236) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 32v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 225mw. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The maximum collector current includes 100ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Mold Compound 02/Apr/2020(PCN Assembly/Origin)
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Copper Wire Update 10/Sep/2015(PCN Design/Specification)
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SOT23 16/Sep/2016(PCN Design/Specification)
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BCW32LT1G(Datasheets)

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FAQs

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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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