Dimensions:
3.04 x 1.4 x 1.11mm
Maximum Collector Emitter Saturation Voltage:
0.25 V dc
Width:
1.4mm
Transistor Configuration:
Single
Maximum Operating Frequency:
1 MHz
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
NPN
Maximum Collector Base Voltage:
32 V dc
Maximum Emitter Base Voltage:
5 V
Length:
3.04mm
Maximum DC Collector Current:
100 mA
Pin Count:
3
Minimum DC Current Gain:
200
Mounting Type:
Surface Mount
Maximum Power Dissipation:
225 mW
Maximum Collector Emitter Voltage:
32 V
Height:
1.11mm
Minimum Operating Temperature:
-50 °C
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
BCW32
Detailed Description:
Bipolar (BJT) Transistor NPN 32V 100mA 225mW Surface Mount SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 2mA, 5V
Transistor Type:
NPN
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
250mV @ 500µA, 10mA
Supplier Device Package:
SOT-23-3 (TO-236)
Voltage - Collector Emitter Breakdown (Max):
32V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
225mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor