Transistor Type:
NPN
Dimensions:
16.26 x 5.3 x 21.08mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
200 W
Maximum Collector Emitter Saturation Voltage:
4 V dc
Maximum Collector Base Voltage:
400 V dc
Maximum Collector Emitter Voltage:
250 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-247
Number of Elements per Chip:
1
Maximum DC Collector Current:
16 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
38 Weeks
Base Part Number:
MJW21
Detailed Description:
Bipolar (BJT) Transistor NPN 250V 16A 4MHz 200W Through Hole TO-247
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 8A, 5V
Transistor Type:
NPN
Frequency - Transition:
4MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
4V @ 3.2A, 16A
Supplier Device Package:
TO-247
Voltage - Collector Emitter Breakdown (Max):
250V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
200W
Customer Reference:
Package / Case:
TO-247-3
Current - Collector (Ic) (Max):
16A
Current - Collector Cutoff (Max):
100µA
Manufacturer:
ON Semiconductor
