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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TBC857B,LM. The maximum collector current includes 150 ma. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 50 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 210 @ 2ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 80mhz. In addition, it is reach unaffected. The transistor is a pnp type. The 650mv @ 100ma, 5ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). It has a long 16 weeks standard lead time. In addition, 30na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. sot-23-3 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 320 mw. Moreover, it corresponds to tbc857, a base product number of the product. The product is designated with the ear99 code number.
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