Minimum DC Current Gain:
100
Transistor Type:
PNP
Dimensions:
21.08 (Dia.) x 8.51mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
175 W
Maximum Continuous Collector Current:
-30 A
Maximum Collector Base Voltage:
-250 V
Maximum Collector Emitter Voltage:
250 V
Maximum Base Emitter Saturation Voltage:
-3.8 V
Height:
8.51mm
Maximum Emitter Base Voltage:
-50 V
Package Type:
TO-204
Number of Elements per Chip:
2
Minimum Operating Temperature:
-65 °C
Maximum Collector Emitter Saturation Voltage:
-3.4 V
Maximum Operating Temperature:
+200 °C
Pin Count:
2
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
MJ11021
Detailed Description:
Bipolar (BJT) Transistor PNP - Darlington 250V 15A 175W Through Hole TO-204 (TO-3)
DC Current Gain (hFE) (Min) @ Ic, Vce:
400 @ 10A, 5V
Transistor Type:
PNP - Darlington
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
3.4V @ 150mA, 15A
Supplier Device Package:
TO-204 (TO-3)
Voltage - Collector Emitter Breakdown (Max):
250V
Packaging:
Tray
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
175W
Customer Reference:
Package / Case:
TO-204AA, TO-3
Current - Collector (Ic) (Max):
15A
Current - Collector Cutoff (Max):
1mA
Manufacturer:
ON Semiconductor
