Transistor Type:
PNP
Dimensions:
6.7 x 3.7 x 1.65mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
800 mW
Maximum Collector Emitter Saturation Voltage:
-0.35 V
Maximum Collector Base Voltage:
-100 V dc
Maximum Collector Emitter Voltage:
60 V
Maximum Base Emitter Saturation Voltage:
-1 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
-6 V
Package Type:
SOT-223
Number of Elements per Chip:
1
Maximum DC Collector Current:
6 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3+Tab
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
22 Weeks
Base Part Number:
NSV606
Detailed Description:
Bipolar (BJT) Transistor PNP 60V 6A 100MHz 800mW Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 1A, 2V
Transistor Type:
PNP
Frequency - Transition:
100MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
350mV @ 600mA, 6A
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
800mW
Customer Reference:
Package / Case:
TO-261-4, TO-261AA
Current - Collector (Ic) (Max):
6A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
